FQA11N90 mosfet equivalent, 900v n-channel mosfet.
* 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @ VGS = 10 V, ID = 5.7 A
* Low Gate Charge (Typ. 72 nC)
* Low Crss (Typ. 30 pF)
* 100% Avalanche Tested
* RoH.
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superi.
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